The use of bismuth (methoxy methyl propanolate)3 as a precursor in forming a ferroelectric material

摘要

The use of bismuth (methoxy methyl propanolate)3 as a bismuth precursor in forming a ferroelectric material containing such as bismuth strontium tantalate, bismuth titanate or bismuth lanthanum titanate. The precursors are deposited in the form of droplets in a solvent such as octane or toluene, the solvent removed and the deposited material annealed by the application of heat.