SURFACE LIGHT-EMITTING SEMICONDUCTOR LASER, METHOD FOR MANUFACTURING THE SAME, OPTICAL APPARATUS, OPTICAL RADIATING APPARATUS, INFORMATION PROCESSING APPARATUS, OPTICAL TRANSMITTING APPARATS, OPTICAL SPACE TRANSMITTING APPARATUS AND OPTICAL TRANSMITTING SYSTEM

摘要

PPROBLEM TO BE SOLVED: To provide a surface light-emitting semiconductor laser for easily controlling a spreading angle. PSOLUTION: The surface light-emitting semiconductor laser includes an n-type lower DBR 106, an active region 108, a p-type upper DBR 112 on the active region 108, and a current constriction layer 110 provided in the vicinity of the active region 108. The mesa P is formed to expose the side surface of the current constriction layer 110. The current constriction layer 110 includes an AlAs layer 110a and an AlSB0.88/SBGaSB0.12/SBAs layer 110b formed in the more active region side than the AlAs layer and a total optical film thickness is equal to /4, when the oscillation wavelength of the laser beam is defined as . The AlAs layer 110a and the AlSB0.88/SBGaSB0.12/SBAs layer 110b are simultaneously oxidized selectively from the side surface of the mesa P. PCOPYRIGHT: (C)2008,JPO&INPIT