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PLASMA RESISTANT SILICON CARBIDE SINTERED COMPACT AND METHOD OF MANUFACTURING THE SAME
PLASMA RESISTANT SILICON CARBIDE SINTERED COMPACT AND METHOD OF MANUFACTURING THE SAME
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机译:耐等离子碳化硅烧结体及其制造方法
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摘要
PROBLEM TO BE SOLVED: To provide a plasma resistant silicon carbide sintered compact having ≥3.16 kg/cm3 bulk density and a method of stably manufacturing the same.;SOLUTION: The method of manufacturing the plasma resistant silicon carbide sintered compact includes a step for preparing a slurry solution containing silicon carbide powder and a carbon source, a step for obtaining silicon carbide granular powder having ≥89% drying rate from the slurry using a spray drying method, a step for taking out the silicon granular powder having 150-50 μm granular particle diameter distribution from the silicon carbide granular powder and a step for sintering the silicon carbide granular powder using a hot press method.;COPYRIGHT: (C)2008,JPO&INPIT
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机译:解决的问题:提供一种堆积密度为3.16kg / cm 3 Sup>的耐等离子体的碳化硅烧结体及其稳定制造方法。解决方案:耐等离子体的制造方法碳化硅烧结体包括以下步骤:制备包含碳化硅粉末和碳源的浆料溶液;使用喷雾干燥法从浆料中获得干燥率≥89%的碳化硅颗粒粉末的步骤;取出步骤。碳化硅颗粒粉末具有150-50μm的颗粒粒径分布的硅颗粒粉末,以及使用热压法烧结碳化硅颗粒粉末的步骤。版权所有:(C)2008,JPO&INPIT
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