EPITAXIAL WAFER FOR SEMICONDUCTOR LUMINESCENT DEVICE AND SEMICONDUCTOR LUMINESCENT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer capable of suppressing the diffusion of a p-type dopant to an active layer during crystalline growth or LED energization, and to provide a semiconductor luminescent device using the wafer.;SOLUTION: An Si dope n-type GaAs buffer layer 12, an Si dope n-type AlGaInP clad layer 13, an undope AlGaInP active layer 14, an Mg dope p-type AlGaInP clad layer 15, a first GaP current diffusion layer 17a (having a film thickness of 4 μm, a carrier concentration of 4.0×10¹⁸/cm³, and a carbon concentration of 1.0×10¹⁷cm^-3), and a second GaP current diffusion layer 17b (having a film thickness of 8 μm, a carrier concentration of 4.0×10¹⁸/cm³, and a carbon concentration of 1.0×10¹⁸cm^-3) are sequentially laminated on an Si dope n-type GaAs substrate 11.;COPYRIGHT: (C)2008,JPO&INPIT