首页> 外国专利> ZnO SELF-SUPPORTED CRYSTAL FILM HAVING HIGH C-AXIS ORIENTATION AND HIGH SPECIFIC SURFACE AREA AND METHOD OF MANUFACTURING THE SAME

ZnO SELF-SUPPORTED CRYSTAL FILM HAVING HIGH C-AXIS ORIENTATION AND HIGH SPECIFIC SURFACE AREA AND METHOD OF MANUFACTURING THE SAME

机译:具有高C轴定向和高比表面积的ZnO自支撑晶体膜及其制造方法

摘要

PPROBLEM TO BE SOLVED: To provide a ZnO self-supported crystal film having high c-axis orientation and high specific surface area and a method of manufacturing the same. PSOLUTION: The method of manufacturing an oriented ZnO crystal film using a reaction system in which zinc oxide is precipitated comprises the steps of: adding ethylenediamine or ammonia to the reaction system in which zinc oxide is precipitated, appropriately adjusting temperature and pH of the reaction system, maintaining the reaction system for an appropriate time, standing the reaction system to cool or cooling the reaction system to precipitate zinc oxide to form a self-supported film or a transferable film floating on the liquid surface of the reaction system. Also disclosed are a ZnO self-supported crystal film having high c-axis orientation and high specific surface area and a ZnO device. PCOPYRIGHT: (C)2008,JPO&INPIT
机译:

要解决的问题:提供具有高c轴取向和高比表面积的ZnO自支撑晶体膜及其制造方法。

解决方案:使用其中沉淀有氧化锌的反应系统制造取向的ZnO晶体膜的方法包括以下步骤:向其中沉淀有氧化锌的反应系统中添加乙二胺或氨水,适当调节其温度和pH值。在反应体系中,将反应体系保持适当的时间,静置反应体系以冷却或冷却反应体系以沉淀氧化锌,从而形成漂浮在反应体系液面上的自支撑膜或可转移膜。还公开了具有高c轴取向和高比表面积的ZnO自支撑晶体膜和ZnO器件。

版权:(C)2008,日本特许厅&INPIT

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号