MONITORING OF OPTICAL EMISSION SPECTROSCOPIC PROCESS AND MEASUREMENT OF MATERIAL CHARACTERISTICS

摘要

PPROBLEM TO BE SOLVED: To provide a method and equipment for processing semiconductor materials using a focused laser beam. PSOLUTION: A focused laser beam is scanned on the top surface of a sample to provide a controlled processing effect limited to a range along a beam diameter and a scanning path. The processing effects such as curing, annealing, implant activation, selective melting, deposition, and chemical reaction can be achieved with a dimension limited by a diameter of the focused laser beam. A laser beam can be concentrated on a sample to excite optical emission on the top surface of a sample being processed and such a step can include a laser process. Generated optical emission can be analyzed effectively to determine various characteristics during the process. The processing effects such as chemical composition analysis, chemical species concentration, depth profile, measurement and mapping of homogeneous characteristics, purity, and reactivity can be monitored by an optical spectroscopic method. PCOPYRIGHT: (C)2008,JPO&INPIT