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MOLECULAR ELEMENT WITH MAGNETIC FIELD RESPONSE, MAGNETIC FIELD MEASURING METHOD AND MAGNETIC FIELD MEASURING DEVICE

机译:具有磁场响应的分子元件,磁场测量方法和磁场测量装置

摘要

PROBLEM TO BE SOLVED: To provide a molecular element that has high sensitivity and responsiveness to faint magnetic field and low magnetic field, and to provide magnetic field measuring technology using the same.;SOLUTION: The molecular element displays conductivity when it is optically excited, and its charge recombined fluorescence or electric resistance varies even by application of magnetic field. When the intensity B of applied magnetic field is reduced under an irradiating light with optionally predetermined intensity, the fluorescent intensity variation rate R to magnetic field represented by the following formula shows a minimum value or a maximum value Rm in a magnetic field Ba of limited intensity excluding zero, and when it is reduced furthermore, the R increases or decreases and it becomes zero in the zero magnetic field. R=[Φ(B)-Φ(0)]/Φ(0) where, Φ(B): fluorescent emission intensity or resistance when the intensity of magnetic field is B under the irradiating light with predetermined intensity; Φ(0): fluorescent emission intensity or resistance in zero magnetic field under the same irradiating light.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供对微弱的磁场和低磁场具有高灵敏度和响应性的分子元素,并提供使用该分子元素的磁场测量技术。;解决方案:该分子元素在被光激发时具有导电性,并且其电荷复合荧光或电阻甚至通过施加磁场而变化。当在具有可选的预定强度的照射光下减小施加的磁场强度B时,由下式表示的磁场的荧光强度变化率R在有限强度的磁场Ba中显示出最小值或最大值Rm。如果不包括零,则当R进一步减小或减小时,R在零磁场中变为零。 R = [(B)-(0)] /(0)其中,(B):在以预定强度的照射光下磁场强度为B时的荧光发射强度或电阻。 ((0):在相同照射光下零磁场下的荧光发射强度或电阻。;版权:(C)2009,JPO&INPIT

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