首页> 外国专利> METHOD FOR MONITORING AND OPTIMIZING PROCESS IN-SITU, EX-SITU AND IN-LINE AND MANUFACTURING METHOD THEREFOR

METHOD FOR MONITORING AND OPTIMIZING PROCESS IN-SITU, EX-SITU AND IN-LINE AND MANUFACTURING METHOD THEREFOR

机译:原位,异位和在线监测和优化过程的方法及其制造方法

摘要

PPROBLEM TO BE SOLVED: To provide a method for monitoring and optimizing a process related to a semiconductor device and its components in-situ, ex-situ and in-line. PSOLUTION: The method and a system for controlling, monitoring, optimizing and manufacturing a device and its components and related base members on a semiconductor in an in-situ process includes a light irradiation system and an electric probe circuit. The light irradiation system includes a light source and a detector for measuring optical characteristics of the base members in-situ. A voltage and a current are applied by the electric probe circuit. The electric probe circuit measures changes of electric characteristics of the base members caused by light irradiation, the voltage and/or the current. The in-situ process is controlled by optical and electrical measurement. PCOPYRIGHT: (C)2009,JPO&INPIT
机译:

要解决的问题:提供一种方法,用于就地,异地和在线监测和优化与半导体器件及其组件有关的工艺。解决方案:用于在原位工艺中控制,监视,优化和制造半导体上的设备及其组件和相关基础部件的方法和系统,包括光照射系统和电探针电路。该光照射系统包括光源和用于原位测量基础构件的光学特性的检测器。电探针电路施加电压和电流。电探针电路测量由光照射,电压和/或电流引起的基体构件的电特性的变化。原位过程由光学和电气测量控制。

版权:(C)2009,日本特许厅&INPIT

著录项

  • 公开/公告号JP2008263200A

    专利类型

  • 公开/公告日2008-10-30

    原文格式PDF

  • 申请/专利权人 WAFERMASTERS INC;

    申请/专利号JP20080100949

  • 发明设计人 YOO WOO SIK;KANG KITAEK;

    申请日2008-04-09

  • 分类号H01L21/268;H01S3;H01L21/66;H01L21/3065;H01L21/265;

  • 国家 JP

  • 入库时间 2022-08-21 20:23:23

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号