首页> 外国专利> SINGLE CRYSTAL TUNGSTEN CHIP, ITS APPLICATION APPARATUS, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL CHIP HAVING SHARP END

SINGLE CRYSTAL TUNGSTEN CHIP, ITS APPLICATION APPARATUS, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL CHIP HAVING SHARP END

机译:单晶钨芯片及其应用装置和制造具有尖锐末端的单晶芯片的方法

摘要

PROBLEM TO BE SOLVED: To obtain a rod-like single crystal having a tip as sharpened as in an atomic level.;SOLUTION: A single crystal tungsten emitter, for example, is treated as follows. First, when a treatment voltage Vr is gradually increased at a high temperature (Tr=2,300°K), a field emission voltage Vext suddenly decreases just after a stage (D) and a 111 top is surrounded by (110) planes. Then the treatment process temperature is gradually lowered to Tr=1,700°K while keeping the voltage. Then, a thermal field treatment by a remolding method is continued while the temperature Tr is kept as low as 1,700°K; and when the FE pattern shows emission of electrons from several atoms at the tip, the treatment is stopped.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:为了获得杆状单晶,其尖端具有与原子水平一样的尖锐度。解决方案:例如,对单晶钨发射体进行如下处理。首先,当治疗电压V r 在高温下(T r = 2,300°K)逐渐增加时,场发射电压V ext 在阶段(D)之后突然减小,并且<111>顶部被(110)平面包围。然后,在保持电压的同时,将处理过程的温度逐渐降低至T r = 1,700°K。然后,在保持温度T r 低至1,700°K的同时,继续通过重塑方法进行热处理。当FE模式显示出尖端有多个原子发射电子时,该处理就停止了。;版权所有:(C)2009,日本特许厅&INPIT

著录项

  • 公开/公告号JP2008239376A

    专利类型

  • 公开/公告日2008-10-09

    原文格式PDF

  • 申请/专利权人 SHIMADZU CORP;UNIV MEIJO;

    申请/专利号JP20070079736

  • 发明设计人 SHIMOYAMA HIROSHI;FUJITA MAKOTO;

    申请日2007-03-26

  • 分类号C30B29/02;H01J1/304;H01J9/02;H01J37/073;G01N13/10;C30B29/62;

  • 国家 JP

  • 入库时间 2022-08-21 20:23:21

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