首页> 外国专利> APPARATUS FOR REMOVING UNNECESSARY OBJECT FROM PERIPHERAL EDGE OF SUBSTRATE, SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR REMOVING UNNECESSARY OBJECT FROM PERIPHERAL EDGE OF SUBSTRATE

APPARATUS FOR REMOVING UNNECESSARY OBJECT FROM PERIPHERAL EDGE OF SUBSTRATE, SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR REMOVING UNNECESSARY OBJECT FROM PERIPHERAL EDGE OF SUBSTRATE

机译:从基板的周缘去除不必要的物体的装置,半导体制造装置以及从基板的周缘去除不必要的物体的方法

摘要

PROBLEM TO BE SOLVED: To efficiently remove an unnecessary object stuck to a peripheral edge of a wafer in a wafer process.;SOLUTION: The wafer 20 is placed on a substrate stage 31 in a chamber 30. Helium gas is led from a feed port 38a of a pipe 38 into the chamber 30 to generate helium gas plasma P1 by a plasma generation means. Then chlorine gas is led from a processing gas feeding nozzle 33 to generate chlorine gas plasma P2. The concentration of chlorine gas around the peripheral edge of the wafer 20 is controlled to a high concentration by controlling an exhaust speed of an exhausting apparatus and the peripheral edge of the wafer 20 is covered with the chlorine gas plasma P2 to etch and remove the unnecessary object stuck thereon.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:为了有效地去除在晶片处理过程中粘附在晶片外围边缘上的不必要物体。解决方案:将晶片20放置在腔室30中的衬底台31上。从进料口引入氦气管38的管38a进入腔室30,以通过等离子体产生装置产生氦气等离子体P1。然后,从处理气体供给喷嘴33引导氯气以产生氯气等离子体P2。通过控制排气装置的排气速度,将晶片20的周缘周围的氯气的浓度控制为高浓度,并用氯气等离子体P2覆盖晶片20的周缘,从而蚀刻除去不需要的物质。物件卡在其上。;版权:(C)2008,JPO&INPIT

著录项

  • 公开/公告号JP2008177512A

    专利类型

  • 公开/公告日2008-07-31

    原文格式PDF

  • 申请/专利权人 PHYZCHEMIX CORP;

    申请/专利号JP20070012029

  • 发明设计人 OGURA KEN;OSADA MASARU;SEKINE TAKAYUKI;

    申请日2007-01-22

  • 分类号H01L21/3065;H01L21/304;B08B7/00;

  • 国家 JP

  • 入库时间 2022-08-21 20:22:44

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