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JOINING BODY USING PERITECTIC SYSTEM ALLOY, JOINING METHOD, AND SEMICONDUCTOR DEVICE

机译:使用包晶系统合金的连接体,连接方法和半导体装置

摘要

PROBLEM TO BE SOLVED: To provide a joining body which can keep excellent mechanical strength even under high temperature conditions using joining material having no lead substantially, and further to provide a semiconductor device.;SOLUTION: Instead of an expensive Au-Sn eutectic alloy substantially containing 80 mass% of Au, an Au-Sn alloy containing Au less than that of the Au-Sn eutectic alloy by 40 to 60% can be applied for high temperature soldering by introducing a quenching process in a mounting process. The melting point of a low-Au-containing alloy produced at an ordinary cooling speed is disturbed by a non-equilibrium peritectic reaction, and becomes lower than the melting point on the equilibrium diagram. In this case, when the Au-Sn alloy is produced by quenching, the amount of the phase to be produced at the melting point on the equilibrium diagram or at its temperature increases, and the heat resisting property can be improved.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种即使使用高温下基本上不使用铅的接合材料也能在高温条件下仍保持优异的机械强度的接合体,并进一步提供一种半导体器件。通过在安装工序中引入淬火工序,可以使含有80质量%的Au的Au-Sn合金的含量比Au-Sn低共熔合金的Au的含量少40〜60%。在通常的冷却速度下生产的低Au含量的合金的熔点受到不平衡包晶反应的干扰,并且变得低于平衡图上的熔点。在这种情况下,当通过淬火生产Au-Sn合金时,在平衡图上的熔点或在其温度下要产生的相数量会增加,并且可以提高耐热性。 C)2008,日本特许厅

著录项

  • 公开/公告号JP2008080393A

    专利类型

  • 公开/公告日2008-04-10

    原文格式PDF

  • 申请/专利权人 TOSHIBA CORP;

    申请/专利号JP20060266602

  • 申请日2006-09-29

  • 分类号B23K35/26;B23K35/30;C22C13/00;C22C5/02;B23K1/00;H05K3/34;H01L21/52;B23K101/40;

  • 国家 JP

  • 入库时间 2022-08-21 20:21:55

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