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EXPOSURE MARGIN CALCULATION METHOD, EXPOSURE EVALUATION DEVICE, AND EXPOSURE EVALUATION PROGRAM

机译:曝光量计算方法,曝光量评估装置和曝光量评估程序

摘要

PROBLEM TO BE SOLVED: To provide an exposure margin calculation method capable of calculating an exposure margin of various shapes and exposure patterns of arbitrary dimensions, and to provide an exposure evaluation device and an exposure evaluation program.;SOLUTION: The method includes steps of: obtaining, for each exposure D, a plurality of images of an exposure pattern formed on an object to be exposed such as a semiconductor wafer W through an exposure step; processing the images of the exposure pattern to calculate, for each exposure D, an outer peripheral length L of the exposure pattern; comparing the outer peripheral length L with the outer peripheral length L0 of a design pattern to calculate, for each exposure, an outer peripheral length difference dL, which is a difference between them; and calculating an exposure margin An.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种能够计算各种形状和任意尺寸的曝光图案的曝光裕度计算方法,并提供一种曝光评估装置和曝光评估程序。解决方案:该方法包括以下步骤:对于每个曝光D,通过曝光步骤获得形成在诸如半导体晶片W的要被曝光的物体上的曝光图案的多个图像;处理曝光图案的图像,以针对每次曝光D计算曝光图案的外周长L;将外周长度L与设计图案的外周长度L0进行比较,以针对每次曝光计算它们之间的差即外周长度差dL;并计算曝光余量An .;版权:(C)2008,JPO&INPIT

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