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To allow reuse of photomasks in the vertical structure, hiding alignment marks and repeated overlay marks is repeated
To allow reuse of photomasks in the vertical structure, hiding alignment marks and repeated overlay marks is repeated
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机译:为了在垂直结构中重复使用光掩模,需要重复隐藏对准标记和重复的覆盖标记
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摘要
It is possible In the preparation of a monolithic three dimensional memory array, using multiple photomasks. The reuse of the photo mask, a second, reference mark following examples or third is formed. Stepper measuring alignment achieved directly above the previous examples with the same reference marks and to achieve (alignment marks) aligned with the reference mark these examples (registration marks). Sometimes preceding examples of the same fiducials, cause interference with the current example of a reference mark, there is a case where alignment and measurement is complicated, but using the method of the present invention, the light shielding structure on the same basis interposed vertically between the subsequent example of the mark, the interference is prevented.
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