首页> 外国专利> To allow reuse of photomasks in the vertical structure, hiding alignment marks and repeated overlay marks is repeated

To allow reuse of photomasks in the vertical structure, hiding alignment marks and repeated overlay marks is repeated

机译:为了在垂直结构中重复使用光掩模,需要重复隐藏对准标记和重复的覆盖标记

摘要

It is possible In the preparation of a monolithic three dimensional memory array, using multiple photomasks. The reuse of the photo mask, a second, reference mark following examples or third is formed. Stepper measuring alignment achieved directly above the previous examples with the same reference marks and to achieve (alignment marks) aligned with the reference mark these examples (registration marks). Sometimes preceding examples of the same fiducials, cause interference with the current example of a reference mark, there is a case where alignment and measurement is complicated, but using the method of the present invention, the light shielding structure on the same basis interposed vertically between the subsequent example of the mark, the interference is prevented.
机译:在制备单片三维存储器阵列时,可以使用多个光掩模。形成光掩模的再利用,形成第二个参考标记,下面的例子或第三个。步进测量通过相同的参考标记直接在先前示例的上方实现对齐,并实现与这些示例(注册标记)的参考标记对齐(对齐标记)。有时,相同基准的先前示例会干扰参考标记的当前示例,有时会导致对齐和测量复杂,但是使用本发明的方法,相同基础上的遮光结构会垂直插入在标记的后续示例中,可以防止干扰。

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