The raw materials chemical compound for CVD and in the raw materials chemical compound for CVD which consists of the chemical vapor phase

摘要

PROBLEM TO BE SOLVED: To provide a raw material compound for producing a ruthenium thin film or a ruthenium compound thin film by a CVD method, present in a liquid state at normal temperature, having good stability and high vapor pressure, and capable of providing the thin film having high adhesiveness to a base plate.;SOLUTION: The raw material compound for the CVD consists essentially of an organoruthenium compound. The organoruthenium compound has two β-diketones coordinated with the ruthenium, and dienes, amines or two organic ligands also coordinated therewith. The vapor pressure of the organoruthenium compound is made suitable by regulating the carbon number of the coordinated β-diketones, kinds of the dienes, or the like.;COPYRIGHT: (C)2004,JPO