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摘要

PPROBLEM TO BE SOLVED: To improve performance of a semiconductor device (for optimal extremely small fine processing) and obtain an optional pattern shape on a wafer after alignment even when a reflection type mask corresponding to an extremely short ultraviolet light is used. PSOLUTION: This method for correcting a mask pattern for extremely short ultraviolet light is used to obtain a pattern having an optional shape as a transfer picture on an object to be aligned, when an alignment mask 10 provided with a mask blank 12 reflecting an extremely short ultraviolet light and an absorption film 14 covering its one side by a specified pattern is used to align the object by reflecting the extremely short ultraviolet light. An angle formed by a projection vector of an inclined incident light to the alignment mask 10 and an optional one side of a pattern formed by the absorption film 14 is extracted, and the obtained angle is reflected on the quantity of correction for the pattern formed by the absorption film 14. PCOPYRIGHT: (C)2003,JPO