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Method and apparatus for generating a surface wave plasma excited by a conductor near field

机译:产生由导体近场激发的表面波等离子体的方法和设备

摘要

PROBLEM TO BE SOLVED: To provide a method and a device of generating ground wave excitation plasma at a conductor proximity area.;SOLUTION: The device is provided with a target 16 made of a conductor arranged so that at least its one end come close to a microwave supply opening 12a in a chamber 11, a dielectric window 15 arranged inside the microwave supply opening, a means of initially generating a plasma phase in the vicinity of the surface of the target, and a bias power supply 18 for enlarging a low-electron density sheath area between the plasma phase initially generated by applying a negative bias voltage on the target and the target surface. The generating device of the ground wave excitation plasma is so constructed to apply a plasma treatment on the target itself or on the surface of a processed material 20 when arranged in contact with the plasma phase by the ground wave excitation plasma at an interface between the plasma phase 21 and the low-electron density sheath area.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种在导体邻近区域产生地波激发等离子体的方法和装置。解决方案:该装置配备有由导体制成的靶16,靶16布置成至少其一端靠近腔室11中的微波供应开口12a,布置在微波供应开口内部的介电窗15,在靶表面附近初始产生等离子体相的装置以及用于放大低功率的偏置电源18。通过在目标和目标表面上施加负偏置电压最初生成的等离子体相之间的电子密度护套面积。地波激发等离子体的产生装置被构造成当通过地波激发等离子体在等离子体之间的界面处与等离子体相接触布置时,对靶本身或在被处理材料20的表面上施加等离子体处理。 21相和低电子密度鞘区。;版权所有:(C)2004,日本特许厅

著录项

  • 公开/公告号JP4152135B2

    专利类型

  • 公开/公告日2008-09-17

    原文格式PDF

  • 申请/专利权人 上坂 裕之;斧 高一;

    申请/专利号JP20020201025

  • 发明设计人 上坂 裕之;斧 高一;

    申请日2002-07-10

  • 分类号H05H1/46;C23C14/35;

  • 国家 JP

  • 入库时间 2022-08-21 20:21:02

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