HIGH RESISTANCE GaN THIN FILM, AND VAPOR PHASE EPITAXIAL GROWTH METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve a GaN thin film with high resistance of 10,000 Ωcm or more in a short period of time and with ease.;SOLUTION: In forming a GaN thin film in the MOCVD method using ammonia and trimethyl gallium as materials, film formation is carried out with organic aluminum materials entrained. Trimethyl aluminum, triethyl aluminum and tri-isobutyl aluminum are used for the organic aluminum materials, which are supplied at vapor phase molar fraction of 5% or less to the supply amount of trimethyl gallium.;COPYRIGHT: (C)2008,JPO&INPIT