The field-effect transistor which is produced by wet chemical deposition method

摘要

This invention the field-effect transistor, and the baseplate (480) is something which offers the production method of the field-effect transistor due to the accumulation to above. This method, in order to form the semi- conductive material, includes the wet chemical precipitation of the material which reacts. The material which is accumulated, includes cadmium, zinc, the lead, tin, the bismuth, antimony, indium, the copper or the mercury. Due to chemical bath deposition method or spraying thermal amount solution it is possible wet chemical precipitation. Vacuum accumulation process is unnecessary.