Growth method and device Si-Ge semiconductor material on a substrate

摘要

(Ge 50 atomic%) content of a Ge-rich and methods to be grown on Si (100) and Si-Ge materials with precise stoichiometric _SiGe, the SiGe ₄ and 2, SiGe ₃ SiGe is provided. Using a new hydride with Si-Ge bonds directly obtained from the group _{(H 3 Ge) x SiH 4-x} in (x = 1~4) compounds at low temperatures unprecedented about 300~450 ℃, and by growing the film planar (relayed) advanced relayed uniform low defect density, the buffer layer with a thickness and composition gradients necessary to use a lift-off method is completely eliminated. At about 500~700 ℃, narrow size distribution, SiGe _x quantum dot is grown and elemental content of highly homogeneous at the atomic level and defect-free microstructure. The method, in which through integration into the membrane of the entire Si / Ge framework of the gaseous precursor and provide accurate control of the distortion form, composition, and structure. Material grown has a microstructural feature and morphological required for use in the buffer layer and the template for the development of commercial devices based on Ge channel and high mobility Si and optical systems, and high-frequency electronic have.