Method for planarizing a surface (CMP) and mechanical polishing - chemical slurry containing abrasive particles of CeO2 and clay

摘要

Based on the weight of solids (a) and a liquid carrier, (b) composition, clay abrasive particles of about 10% from 0.1%, CeO ₂ of from about 0.1% to about 50% by weight by weight consists of particles, the abrasive particles of CeO ₂ and clay, when it is slurried in water, the composition for polishing or planarizing a surface of more than 90% of the particles have a particle size of about 10μm from about 10nm.