首页> 外国专利> Making use with of record manner, hologram exposure manner, the production manner of the semiconductor and the original reticule where

Making use with of record manner, hologram exposure manner, the production manner of the semiconductor and the original reticule where

机译:利用记录方式,全息图曝光方式,半导体的生产方式和原版

摘要

PROBLEM TO BE SOLVED: To provide a recording method and a hologram exposure method capable of easily adjusting a focal point depth in hologram exposure without requiring contrivance of the configuration of a hologram exposure apparatus, and to provide a method of manufacturing a semiconductor and a method of manufacturing an electro-optical device.;SOLUTION: This recording method is provided with a first recording step in which a reticle R1 and a hologram mask H1 are oppositely arranged with a predetermined interval G0, a recording layer 2 is irradiated with a recording beam via the reticle R1, and the recording layer 2 is irradiated with a reference beam at a predetermined incident angle from the hologram mask H1 side; and a second recording step in which the reticle R1 and the hologram mask H1 are offset at a predetermined distance ΔG for a predetermined interval G0 and oppositely arranged, and the recording layer 2 is simultaneously irradiated with the recording beam and reference beam via the reticle R1. An exposure pattern of the reticle R1 is multiply recorded on the hologram mask H1, and the focal point depth of a reproduction light can be adjusted at the time of hologram exposure.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种记录方法和全息图曝光方法,该方法和全息图曝光方法能够容易地调整全息图曝光中的焦点深度,而无需考虑全息图曝光设备的构造,并且提供一种半导体的制造方法和方法。解决方案:该记录方法具有第一记录步骤,在该第一记录步骤中,掩模版R1和全息掩模H1以预定间隔G 0 相对地布置,从而进行记录。经由掩模版R1向记录层2照射记录光束,并且从全息掩模H1侧以预定的入射角照射记录层2。以及第二记录步骤,其中将掩模版R1和全息掩模H1以预定距离ΔG偏移预定间隔G 0 并相对地布置,并同时照射记录层2。记录光和参考光通过分划板R1。掩模版R1的曝光图案被多次记录在全息图掩模H1上,并且在全息图曝光时可以调节再现光的焦点深度。;版权所有:(C)2008,JPO&INPIT

著录项

  • 公开/公告号JP4127287B2

    专利类型

  • 公开/公告日2008-07-30

    原文格式PDF

  • 申请/专利权人 セイコーエプソン株式会社;

    申请/专利号JP20060101656

  • 发明设计人 入口 千春;

    申请日2006-04-03

  • 分类号H01L21/027;G03F7/20;G03F1/08;

  • 国家 JP

  • 入库时间 2022-08-21 20:18:21

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