External-cavity semiconductor laser using the same method of manufacturing the same, and a semiconductor optical element having a wide spectrum light emission characteristics

摘要

Semiconductor optical device, and an active layer having multiple quantum wells consisting of a plurality of well layers sandwiched between barrier layers and the plurality of barrier layers formed between the semiconductor substrate and above the semiconductor substrate . It becomes In _{xa Ga} from _(1-xa) As layer, the well layers of _one, or a range of approximately 0.20 to approximately 0.05 of the composition ratio xa of the In at least one of the well layer of the multiple I take the value of. Thus, it is formed as a strained well layer takes one of the values ​​ranging from approximately 1.5% approximately 0.35% lattice distortion caused in the well layer, a semiconductor optical device, the strain well layer is formed with a band gap wavelength that is different from the well layers of the other. Thus, the optical spectrum characteristics, at between approximately 850nm from approximately 800nm, the semiconductor optical element is configured to provide enable broad optical spectrum characteristic with a spectral half width less than a predetermined value and a center wavelength.