Method of forming a nitride film, forming apparatus, oxynitride film, nitride film, and the substrate and oxynitride film

摘要

I to form the oxynitride film and nitride film uniform low temperature and high-speed nitride is possible dependence of the nitriding time and nitriding temperature of nitriding reaction and, without. Pressure under a pressure of 300 (Torr) or higher, and set up a solid dielectric on the facing surface of at least one of the pair of opposing electrodes, a nitrogen gas containing an oxide of 0.2% or less between the opposed electrodes of the pair brought into contact with the object to be treated and _N 2 (H.I.R.) active species or plasma ⁽² nd ^p.s.), nitriding treatment to said workpiece surface _N 2 is obtained by applying an electric field by introducing I will form a film / oxynitride film.