III family nitride crystal which is obtained production method of III family nitride crystal with and that and III family nitride baseplate which uses that

摘要

It contains Mg to the flux which at least includes with one which is chosen from Ga, Al and In under the atmosphere which includes nitrogen, III family element and the alkaline metal, III family nitride crystal grows in that flux, forms III family nitride baseplate. There are no times which as for Mg, because it is the P type doping material of III family nitride crystal, Mg mixing into crystal, as for crystal show P type or semi-insulating electric quality, they become problem at the time of electronic device applying. In addition, by the fact that Mg is made to contain to the aforementioned flux, the melting quantity of the nitrogen to in the flux increases, grain growth at fast growth rate becomes possible, also reproducibility of grain growth improves.