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Variable Threshold Transistor For The Schottky FPGA And Multilevel Storage Cell Flash Arrays

机译:肖特基FPGA和多级存储单元闪存阵列的可变阈值晶体管

摘要

An IC solution utilizing mixed FPGA and MLC arrays is proposed. The process technology is based on the Schottky CMOS devices comprising of CMOS transistors, low barrier Schottky barrier diode (SBD), and multi-level cell (MLC) flash transistors. Circuit architectures are based on the pulsed Schottky CMOS Logic (SCL) gate arrays, wherein a variable threshold NMOS transistor may replace the regular switching transistor. During initialization windows, existing FPGA programming techniques can selectively adjust the VT of the switching transistor, re-configure the intra-connections of the simple SCL gates, complete all global interconnections of various units. Embedded hardware arrays, hardwired blocks, soft macro constructs in one chip, and protocols implementations are parsed. A wide range of circuit applications involving generic IO and logic function generation, ESD and latch up protections, and hot well biasing schemes are presented. The variable threshold transistors thus serve 3 distinctive functions.
机译:提出了一种使用混合FPGA和MLC阵列的IC解决方案。该工艺技术基于肖特基CMOS器件,该器件包括CMOS晶体管,低势垒肖特基势垒二极管(SBD)和多级单元(MLC)闪存晶体管。电路架构基于脉冲肖特基CMOS逻辑(SCL)门阵列,其中可变阈值NMOS晶体管可以替代常规开关晶体管。在初始化窗口期间,现有的FPGA编程技术可以有选择地调节开关晶体管的VT,重新配置简单SCL门的内部连接,完成各个单元的所有全局互连。解析了一个芯片中的嵌入式硬件阵列,硬接线模块,软宏构造以及协议实现。提出了广泛的电路应用,包括通用IO和逻辑功能生成,ESD和闩锁保护以及热阱偏置方案。因此,可变阈值晶体管具有3种独特的功能。

著录项

  • 公开/公告号US2008061824A1

    专利类型

  • 公开/公告日2008-03-13

    原文格式PDF

  • 申请/专利权人 AUGUSTINE W. CHANG;

    申请/专利号US20070934655

  • 发明设计人 AUGUSTINE W. CHANG;

    申请日2007-11-02

  • 分类号H03K19/177;

  • 国家 US

  • 入库时间 2022-08-21 20:16:25

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