Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material

摘要

A method for two step cleaning of semiconductor substrate wherein a first formulation is contacted with the substrate and subsequently a second formulation is contacted with the substrate, optionally followed with a deionized water wash. The first formulation may be remover compositions referred to in the specification, such as a fluoride containing composition, and the second formulation may comprise a basic compound and from 0% to about 90% water, and may further comprise water from 0% to about 92.5% organic solvent.