Semiconductor constructions, methods of forming semiconductor constructions, and methods of recessing materials within openings

摘要

Some embodiments include methods of recessing multiple materials to a common depth utilizing etchant comprising C₄F₆ and C₄F₈. The recessed materials may be within isolation regions, and the recessing may be utilized to form trenches for receiving gatelines. Some embodiments include structures having an island of semiconductor material laterally surrounded by electrically insulative material. Two gatelines extend across the insulative material and across the island of semiconductor material. One of the gatelines is recessed deeper into the electrically insulative material than the other.