Transistors having gate pattern for self-alignment with channel impurity diffusion region in active region and methods of forming the same

摘要

A transistor having a gate pattern suitable for self-alignment with a channel impurity diffusion region in an active region includes an active region and an isolation layer disposed in a semiconductor substrate. The isolation layer is formed to define the active region. An insulating layer covering the active region and the isolation layer is disposed. The insulating layer has a channel-induced hole on the active region. A channel impurity diffusion region and a gate trench are formed in the active region to be aligned with the channel-induced hole. The insulating layer is removed from the semiconductor substrate. A gate pattern is disposed in the gate trench to overlap the channel impurity diffusion region.