首页> 外国专利> METHOD FOR MAKING A LIGHT EMITTING DIODE HAVING A P-N JUNCTION DOPED WITH ONE OR MORE LUMINESCENT ACTIVATOR IONS

METHOD FOR MAKING A LIGHT EMITTING DIODE HAVING A P-N JUNCTION DOPED WITH ONE OR MORE LUMINESCENT ACTIVATOR IONS

机译:制作掺有一个或多个发光活化剂离子的P-N结的发光二极管的方法

摘要

A light emitting diode (LED) includes a p-n junction containing luminescent activator ions. The visible emission from the activator ions preferably complementing the band edge emission of the LED in order to produce an overall white emission from the LED. In a preferred embodiment, the LED has double heterojunction structure having a semiconductor active layer between two confinement layers. The semiconductor active layer includes activator ions preferably selected from among Eu3+, Tb3+, Dy3+, Pr3+, Tm3+, and Mn2+. The electron-hole pairs trapped within the active layer sensitize the activator ions, causing the activator ions to emit light.
机译:发光二极管(LED)包括包含发光活化剂离子的p-n结。来自活化剂离子的可见发射优选地与LED的带边缘发射互补,以便从LED产生整体的白发射。在优选实施例中,LED具有双异质结结构,该双异质结结构在两个限制层之间具有半导体有源层。半导体活性层包括优选选自Eu 3 + ,Tb 3 + ,Dy 3 + ,Pr 3+的活化剂离子。 ,Tm 3 + 和Mn 2 + 。捕获在活性层内的电子-空穴对使活化剂离子敏感,从而使活化剂离子发光。

著录项

  • 公开/公告号US2008226903A1

    专利类型

  • 公开/公告日2008-09-18

    原文格式PDF

  • 申请/专利权人 KAILASH C. MISHRA;

    申请/专利号US20080111380

  • 发明设计人 KAILASH C. MISHRA;

    申请日2008-04-29

  • 分类号C09K11/77;H01J1/62;

  • 国家 US

  • 入库时间 2022-08-21 20:15:28

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