Method for forming fine patterns using etching slope of hard mask layer in semiconductor device

摘要

A method for forming fine patterns in a semiconductor device includes forming a first hard mask layer and a second hard mask layer over an etch target layer, forming second hard mask patterns by etching the second hard mask layer, wherein an etching profile of the second hard mask layer has a positive slope, and etching the first hard mask layer and the etch target layer using the second hard mask patterns as an etch mask.