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Method of forming a silicide layer on a thinned silicon wafer, and related semiconducting structure
Method of forming a silicide layer on a thinned silicon wafer, and related semiconducting structure
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机译:在减薄的硅晶片上形成硅化物层的方法以及相关的半导体结构
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摘要
A semiconducting structure includes a thinned silicon substrate (110), a silicide layer (120) over the thinned silicon substrate, a metal layer (130) over the silicide layer, a solder interface layer (140) over the metal layer, and a cap layer (150) over the solder interface layer. The thinned silicon substrate is no thicker than approximately 500 micrometers. The silicide layer is formed using a rapid thermal processing procedure that locally heats the interface between the metal layer and the silicon substrate but causes no more than negligible thermal impact to other areas of the silicon wafer.
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