FULLY SILICIDING REGIONS TO IMPROVE PERFORMANCE

摘要

Structures and related methods including fully silicided regions are disclosed. In one embodiment, a structure includes a substrate; a partially silicided region located in an active region of an integrated circuit formed on the substrate; a fully silicided region located in a non-active region of the integrated circuit, and wherein the partially and fully silicided regions are formed from a common semiconductor layer.