INCLUSION COMPLEX, PHOTORESIST COMPOSITION HAVING THE INCLUSION COMPLEX AND METHOD OF FORMING A PATTERN USING THE PHOTORESIST COMPOSITION

摘要

A photoresist is formed on an object layer of a semiconductor device by coating the object layer with a photoresist composition including about 7 percent to about 14 percent by weight of an inclusion complex having a β-cyclodextrin derivative as a host and an adamantane derivative as a guest, about 0.1 percent to about 0.5 percent by weight of a photoacid generator, and a remainder of an organic solvent.