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SOI TRANSISTOR HAVING DRAIN AND SOURCE REGIONS OF REDUCED LENGTH AND A STRESSED DIELECTRIC MATERIAL ADJACENT THERETO
SOI TRANSISTOR HAVING DRAIN AND SOURCE REGIONS OF REDUCED LENGTH AND A STRESSED DIELECTRIC MATERIAL ADJACENT THERETO
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机译:SOI晶体管的漏区和源区减小了长度,并在其中施加了应力的介电材料
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摘要
By reconfiguring material in a recess formed in drain and source regions of SOI transistors, the depth of the recess may be increased down to the buried insulating layer prior to forming respective metal silicide regions, thereby reducing series resistance and enhancing the stress transfer when the corresponding transistor element is covered by a highly stressed dielectric material. The material redistribution may be accomplished on the basis of a high temperature hydrogen bake.
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