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METHOD FOR CREATING TENSILE STRAIN BY REPEATEDLY APPLIED STRESS MEMORIZATION TECHNIQUES
METHOD FOR CREATING TENSILE STRAIN BY REPEATEDLY APPLIED STRESS MEMORIZATION TECHNIQUES
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机译:重复应用应力记忆技术建立拉伸应变的方法
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摘要
By introducing additional strain-inducing mechanisms on the basis of stress memorization techniques, the performance of NMOS transistors may be significantly increased, thereby reducing the imbalance between PMOS transistors and NMOS transistors. By amorphizing and re-crystallizing the respective material in the presence of a mask layer at various stages of the manufacturing process, a drive current improvement of up to approximately 27% has been observed, with the potential for further performance gain.
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