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Electronic Component Having Tin Rich Deposit Layer and the Process for Depositing the Same

机译:具有富锡沉积层的电子元器件及其沉积工艺

摘要

The invention relates to an electronic component with Sn rich deposit layer on the part for electric connection, wherein the Sn rich deposit layer is a fine grained Sn rich deposit layer composed of grains with smaller size in the direction perpendicular to the deposit surface than in the direction parallel to the deposit surface. It also relates to a process for plating an electronic component, so as to form a Sn rich deposit layer on the part for electric connection, comprising the steps of: adjusting the composition of tin plating solution in which starter additive and brighter additive are included; moving the electronic component through the tin plating solution, so as to form a fine grained Sn rich deposit layer on the part for electric connection. As compared with the prior art, the invention can validly inhibit the whisker growth with low cost and reliable property.
机译:本发明涉及一种在用于电连接的部件上具有富锡沉积层的电子部件,其中所述富锡沉积层是细晶粒的富锡沉积层,其由在垂直于所述沉积表面的方向上比在所述沉积表面上的方向尺寸小的晶粒组成。平行于沉积表面的方向。本发明还涉及一种电镀电子部件的方法,以在用于电连接的部件上形成富锡沉积层,该方法包括以下步骤:调节其中包含起始添加剂和光亮添加剂的镀锡溶液的组成;通过镀锡溶液移动电子元件,从而在用于电连接的部件上形成细晶粒的富锡沉积层。与现有技术相比,本发明可以以低成本和可靠的性能有效地抑制晶须的生长。

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