首页> 外国专利> ANALYSIS TECHNIQUES TO REDUCE SIMULATIONS TO CHARACTERIZE THE EFFECT OF VARIATIONS IN TRANSISTOR CIRCUITS

ANALYSIS TECHNIQUES TO REDUCE SIMULATIONS TO CHARACTERIZE THE EFFECT OF VARIATIONS IN TRANSISTOR CIRCUITS

机译:分析技术,可减少模拟以表征晶体管电路中变化的影响

摘要

Embodiments of the invention provide a method, computer program product, etc. for analysis techniques to reduce simulations to characterize the effect of variations in transistor circuits. A method of simulating transistors in an integrated circuit begins by reducing a group of parallel transistors to a single equivalent transistor. The equivalent transistor is subsequently simulated, wherein only a portion of the parallel transistors are simulated. Next, the integrated circuit is divided into channel-connected components and simulated for the channel-connected components. A table is created for each type of channel-connected component; and parameterized across chip variation equations are calculated from results of the integrated circuit simulation. Moreover, table entries are created, which include a number of transistor types, a number of unique transistor primitive patterns, and/or a number of paths through each of the transistor primitive patterns.
机译:本发明的实施例提供了一种用于分析技术的方法,计算机程序产品等,以减少模拟以表征晶体管电路中的变化的影响。一种模拟集成电路中的晶体管的方法开始于将一组并行晶体管简化为单个等效晶体管。随后模拟等效晶体管,其中仅模拟并联晶体管的一部分。接下来,将集成电路分为通道连接的组件,并针对通道连接的组件进行仿真。将为每种类型的通道连接的组件创建一个表。根据集成电路仿真的结果,可以计算出芯片变化方程的参数和参数。此外,创建表条目,该表条目包括多种晶体管类型,多种独特的晶体管基元图案和/或穿过每个晶体管基元图案的多个路径。

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