首页>
外国专利>
TECHNIQUE FOR IMPROVING ION IMPLANTATION BASED ON ION BEAM ANGLE-RELATED INFORMATION
TECHNIQUE FOR IMPROVING ION IMPLANTATION BASED ON ION BEAM ANGLE-RELATED INFORMATION
展开▼
机译:基于离子束角度相关信息的离子注入改进技术
展开▼
页面导航
摘要
著录项
相似文献
摘要
A technique for improving ion implantation based on ion beam angle-related information is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving ion implantation. The method may comprise obtaining angle-related information associated with an ion beam. The method may also comprise calculating, based on the angle-related information, an ion beam angle distribution over a wafer for one or more potential scanning modes. The method may further comprise selecting a desired scanning mode from the one or more potential scanning modes based on an evaluation of performance metric caused by the ion beam angle distribution.
展开▼