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Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
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机译:将图案从图案化的光致抗蚀剂转移至材料的半导体加工方法以及包括氮化硅的结构
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摘要
The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned. A pattern is then transferred from the patterned imagable material to the first and second materials. The invention also includes a structure comprising a first layer of silicon nitride over a substrate, and a second layer on the first layer. The second layer comprises silicon and is free of nitrogen. The structure further comprises a third layer consisting essentially of imagable material on the second layer.
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