Method for forming a (TaO)_1-x(TiO)_xN dielectric layer in a semiconductor device

摘要

The present invention provides a method for forming an improved dielectric layer for semiconductor devices such as gate structures and capacitors. The method utilizes a layer of (TaO)_1-x(TiO)_xN (x defined herein) as a substitute for SiO₂, together with one or more additional procedures to minimize or prevent channel leakage and other problems that can minimize the performance of the structure.