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QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions

机译:带有电子发射器的QWIP用于在低背景条件下降低介电弛豫效应

摘要

A QWIP structure is disclosed that includes a graded emitter barrier and can further be configured with a blocked superlattice miniband. The graded emitter barrier effectively operates to launch dark electrons into the active quantum well region, thereby improving responsivity. A graded collector barrier may also be included for reverse bias applications. The configuration operates to eliminate or otherwise reduce image artifacts or persistence associated with dielectric relaxation effect in low-background applications.
机译:公开了一种QWIP结构,该QWIP结构包括分级的发射极屏障,并且可以进一步配置为具有阻塞的超晶格微带。渐变的发射极势垒有效地将暗电子发射到有源量子阱区域中,从而提高了响应度。对于反向偏置应用,还可以包括渐变的集电极势垒。该配置用于消除或减少在低背景应用中与介电弛豫效应相关的图像伪影或持久性。

著录项

  • 公开/公告号US7372068B2

    专利类型

  • 公开/公告日2008-05-13

    原文格式PDF

  • 申请/专利权人 MANI SUNDARAM;AXEL R REISINGER;

    申请/专利号US20070675653

  • 发明设计人 MANI SUNDARAM;AXEL R REISINGER;

    申请日2007-02-16

  • 分类号H01L31;

  • 国家 US

  • 入库时间 2022-08-21 20:12:18

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