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Integrated circuit having a memory cell array capable of simultaneously performing a data read operation and a data write operation

机译:具有能够同时执行数据读取操作和数据写入操作的存储单元阵列的集成电路

摘要

An integrated circuit comprising a memory cell array capable of simultaneously performing data read and write operations is provided. The integrated circuit to which inputs and outputs (IOs) are separately provided and to which a write address and a read address are simultaneously input during one period of a clock signal comprises a plurality of memory blocks, the memory blocks comprising a plurality of sub-memory blocks, a plurality of data memory blocks corresponding to the memory blocks, and a tag memory controlling unit, which writes data to the memory blocks or reads data from the memory blocks in response to the write address or the read address, wherein access to the same sub-memory block is not simultaneously performed when the write address and the read address are the same.
机译:提供了一种包括能够同时执行数据读取和写入操作的存储单元阵列的集成电路。分别提供输入和输出(IO)且在一个时钟信号的一个周期内同时向其输入写地址和读地址的集成电路包括多个存储块,这些存储块包括多个子存储块。存储块,对应于该存储块的多个数据存储块以及标签存储控制单元,其响应于该写入地址或读取地址而将数据写入该存储块或从该存储块读取数据,其中访问当写入地址和读取地址相同时,不能同时执行相同的子存储块。

著录项

  • 公开/公告号US7415590B2

    专利类型

  • 公开/公告日2008-08-19

    原文格式PDF

  • 申请/专利权人 KYO-MIN SOHN;YOUNG-HO SUH;

    申请/专利号US20040814968

  • 发明设计人 YOUNG-HO SUH;KYO-MIN SOHN;

    申请日2004-03-31

  • 分类号G06F12/00;G06F13/00;G06F13/28;

  • 国家 US

  • 入库时间 2022-08-21 20:11:46

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