Spiral Inductor with High Quality Factor of Integrated Circuit

摘要

A spiral inductor with high quality factor for an integrated circuit (IC) is disclosed, in which the metal layers arranged under a spiral inductor layer are parallel-connected to each other by the use of interconnects so as to increase the thickness of the metal layer and thus effectively reduce the parasitic resistance of the spiral inductor. In a preferred aspect, the parasitic resistance of the spiral inductor is reduced by increasing the interconnects, used for connecting the spiral inductor layer and the metal layer arranged underneath the same. In another preferred aspect, an interconnect is formed under the spiral inductor layer while enabling the same to be disconnected from the metal layer directly under the spiral inductor layer, by which the quality factor of the spiral inductor is increased since the substantial sectional area of the spiral inductor layer is increased and thus the parasitic resistance of the spiral inductor is decreased.