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Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots
Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots
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机译:具有1〜10nm分布的硅量子点的光学活性层的制备方法
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摘要
The present invention relates to a method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots, it adopts high temperature processing and atmospheric-pressure chemical vapor deposition (APCVD), and directly deposit to form a silicon nitrite substrate containing 1˜10 nm distributed quantum dots, said distribution profile of quantum dot size from large to small is corresponding to from inner to outer layers of film respectively, and obtain a 400˜700 nm range of spectrum and white light source under UV photoluminescence or electro-luminescence.
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