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Method of fabricating a germanium photo detector on a high quality germanium epitaxial overgrowth layer
Method of fabricating a germanium photo detector on a high quality germanium epitaxial overgrowth layer
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机译:在高质量锗外延生长层上制造锗光电探测器的方法
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摘要
A method of fabricating a germanium photo detector includes preparing a silicon substrate; depositing and planarizing a silicon oxide layer; forming contact holes in the silicon oxide layer which communicate with the underlying silicon substrate; growing an epitaxial germanium layer of a first type on the silicon oxide layer and in the contact holes; growing an intrinsic germanium layer on the epitaxial germanium layer and any exposed silicon oxide layer; growing a germanium layer of a second type on the intrinsic germanium layer and any exposed silicon oxide layer; depositing a layer of covering material take from the group of materials consisting of polysilicon, polysilicon-germanium and In2O3—SnO2; and etching the covering material to form individual sensing elements.
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机译:一种锗光检测器的制造方法,包括制备硅衬底;以及制备硅衬底。沉积并平坦化氧化硅层;在氧化硅层中形成与下面的硅衬底连通的接触孔;在氧化硅层上和接触孔中生长第一类型的外延锗层;在外延锗层和任何暴露的氧化硅层上生长本征锗层;在本征锗层和任何暴露的氧化硅层上生长第二类型的锗层;沉积覆盖材料层,该覆盖材料选自多晶硅,多晶硅锗和In 2 Sub> O 3 Sub> -SnO 2 Sub>蚀刻覆盖材料以形成单独的感测元件。
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