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OPTOELECTRONIC TRANSMITTER INTEGRATED CIRCUIT AND METHOD OF FABRICATING THE SAME USING SELECTIVE GROWTH PROCESS
OPTOELECTRONIC TRANSMITTER INTEGRATED CIRCUIT AND METHOD OF FABRICATING THE SAME USING SELECTIVE GROWTH PROCESS
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机译:光电子发射器集成电路和使用选择性生长过程制造相同电路的方法
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摘要
Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.
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