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Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming same
Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming same
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机译:使用碳掺杂的硅异质结双极晶体管中的选择性连接及其形成方法
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摘要
Bipolar transistors and methods of forming the bipolar transistors. The method including forming a P-type collector in a silicon substrate; forming an intrinsic base on the collector, the intrinsic base including a first N-type dopant species, germanium and carbon; forming an N-type extrinsic base over a first region and a second region of the intrinsic base, the first region over the collector and the second region over a dielectric adjacent to the collector, the N-type extrinsic base containing or not containing carbon; and forming a P-type emitter on the first region of the intrinsic base.
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