首页>
外国专利>
Semiconductor device with integrated trench lateral power MOSFETs and planar devices
Semiconductor device with integrated trench lateral power MOSFETs and planar devices
展开▼
机译:具有集成沟槽横向功率MOSFET的半导体器件和平面器件
展开▼
页面导航
摘要
著录项
相似文献
摘要
Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.
展开▼