首页>
外国专利>
Strain modulation employing process techniques for CMOS technologies
Strain modulation employing process techniques for CMOS technologies
展开▼
机译:采用用于CMOS技术的工艺技术进行应变调制
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method forms a semiconductor device comprising a modifiable strain inducing layer. A semiconductor body is provided. First and second regions of the semiconductor body are identified. A modifiable tensile strain inducing layer is formed over the device within the first and second regions. A mask is then formed that exposes the second region and covers the first region. A material is selected for a modification implant and the selected material is implanted into the second region thereby converting a portion of the modifiable tensile strain inducing layer into a compressive strain inducing layer within the PMOS region.
展开▼