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Plasma etching method, plasma etching apparatus, control program, computer recording medium and recording medium having processing recipe recorded thereon
Plasma etching method, plasma etching apparatus, control program, computer recording medium and recording medium having processing recipe recorded thereon
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机译:等离子蚀刻方法,等离子蚀刻装置,控制程序,计算机记录介质和其上记录有处理配方的记录介质
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摘要
In a first step and a thirst step, etching gases are used which contain fluorocarbon gases having C/F atom number ratios higher than that in a second step. A hole is formed to a midpoint in a silicon oxide film in the first step, the hole is formed until a base SiN film begins to be exposed or immediately before it is exposed in the second step, and overetching is performed in the third step. This enables even a hole having a fine diameter and a high aspect ratio to be formed in an excellent shape.
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